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SIMOPAC(R) Module
BSM 191 F
VDS = 1000 V ID = 28 A R DS(on) = 0.42
q q q q q q q
Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1
Type BSM 191 F Maximum Ratings Parameter Drain-source voltage
Ordering Code C67076-A1053-A2
Symbol
Values 1000 1000 20 28 110 - 55 ... + 150 700 0.18 2500 16 11 F 55/150/56
Unit V
VDS VDGR VGS TC = 25 C TC = 25 C ID ID puls Tj, Tstg Ptot Rth JC
2)
Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, Pulsed drain current, Power dissipation, TC = 25 C Thermal resistance Chip-case Insulation test voltage , t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) 2)
A C W K/W
Operating and storage temperature range
Vis
- - - -
Vac mm -
See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
78
03.96
BSM 191 F
Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VDS = 1000 V, VGS = 0 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 18 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max., ID = 18 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton (ton = td (on) + tr) VCC = 500 V, VGS = 10 V ID = 18 A, RGS = 3.3 Turn-off time toff (toff = td (off) + tf) VCC = 500 V, VGS = 10 V ID = 18 A, RGS = 3.3 Values typ. max. Unit
V(BR)DSS
1000 - 3.0 - 4.0
V
VGS(th)
2.1
I DSS
- - 50 300 10 0.38 250 1000
A
IGSS
- 100
nA - 0.42
RDS(on)
gfs Ciss Coss Crss td (on) tr td (off) tf
15 - - - - - - -
22 22 1.0 0.36 60 30 350 60
- 30 1.5 0.5 - - - -
S nF
ns
Semiconductor Group
79
BSM 191 F
Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Fast recovery reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage IF = 56 A , VGS = 0
1)
Values typ. max.
Unit
IS
- - - 1.2 300 2.2 28 110
A
ISM
-
VSD
- 1.6
V ns - - C - -
Reverse recovery time IF = IS, diF/dt = 100 A/ s, VR = 100 V Reverse recovery charge IF = IS, diF/dt = 100 A/ s, VR = 100 V
1)
trr Qrr
upon request
Semiconductor Group
80
BSM 191 F
Characteristics at Tj = 25 C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 C Typ. output characteristics ID = f (VDS) parameter: tp = 80 s
Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 C, Tj 150 C
Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 s , VDS = 25 V
Semiconductor Group
81
BSM 191 F
Continuous drain current ID = f (TC) parameter: VGS 10 V, Tj = 150 C
Drain-source breakdown voltage V(BR)DSS (Tj) = b x V(BR)DSS (25 C)
Drain-source on-state resistance RDS(on) = f (Tj) parameter: ID = 18 A; VGS = 10 V (spread)
Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz
Semiconductor Group
82
BSM 191 F
Typ. reverse recovery charge Qrr = f (Tj) parameter: diF/dt = 100 A/ s, IF = 28 A, VR = 100 V
Forward characteristics of fast-recovery reverse diode IF = f (VSD) parameter: Tj,tp = 80 s (spread)
Semiconductor Group
83
BSM 191 F
Transient thermal impedance ZthJC = f (tp) parameter: D = tp/T
Typ. gate charge VGS = f (QGate) parameter: IDpuls = 42 A
Semiconductor Group
84

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